Study of an n-MOSFET by designing at 100 nm and simulating using SILVACO ATLAS simulator
By: Bhuyan, Muhibul Haque
.
Contributor(s): Md. Tariqul Islam.
Publisher: Haryana IOSR - International Organization of Scientific Research 2022Edition: Vol.12(1), Jan-Feb.Description: 7-15p.Subject(s): EXTC EngineeringOnline resources: Click here
In:
IOSR journal of VLSI and signal processing (IOSR-JVSP)Summary: In this paper, the design steps of an n-MOSFET have been described and then the electrical characterization of
this MOSFET is simulated at 100 nm by using the SILVACO ATLAS software, which is a process and device
simulation software tool. The MOS device is virtually fabricated using ATHENA in SILVACO and simulations
have been performed with help of ATLAS software, and all graphs are plotted using TONYPLOT in the
SILVACO. The simulated results are then analyzed to study the n-MOSFET device’s mesh structure, transfer
and output characteristics of the same, doping and carrier concentration plot, etc. From the simulation study,
we found that the designed device is working well for various bias conditions.
| Item type | Current location | Call number | Status | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|
Articles Abstract Database
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School of Engineering & Technology Archieval Section | Not for loan | 2022-2022 |
In this paper, the design steps of an n-MOSFET have been described and then the electrical characterization of
this MOSFET is simulated at 100 nm by using the SILVACO ATLAS software, which is a process and device
simulation software tool. The MOS device is virtually fabricated using ATHENA in SILVACO and simulations
have been performed with help of ATLAS software, and all graphs are plotted using TONYPLOT in the
SILVACO. The simulated results are then analyzed to study the n-MOSFET device’s mesh structure, transfer
and output characteristics of the same, doping and carrier concentration plot, etc. From the simulation study,
we found that the designed device is working well for various bias conditions.
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